| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 95 === In this study, MgxZn1-xO (x=0, 0.1, 0.2, 0.3 and 0.36) films have been deposited on sapphire substrates at room temperature by using radio frequency magnetron sputtering system with difference radio frequency power, sputtering pressure and oxygen flow rate. The crystallization, surface morphology and optical properties of the MgxZn1-xO thin films were analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM) and ultraviolet visible spectrometer (UV-VIS), respectively.
From the experimental results, the optimal sputtering parameters for film were found to be, RF power of 100 W, sputtering pressure of 10 mtorr, fixed argon flow rate of 10sccm and oxygen flow rate with the Mg content increased from 4sccm at x=0 to 10 sccm at x=0.36. The transmittance of MgxZn1-xO film has over 90 % in visible light region. The optical band gap were also determined by the transmittance spectra, which increased from 3.24 eV at x=0 to 4.02 eV at x=0.36.
The MgxZn1-xO (x=0~0.36) were used as the absorption layers of MSM-PDs. It can be found that dark current of MgxZn1-xO (x=0~0.36) MSM-PDs were 5.6 pA (x=0.36) to 15.4 pA (x=0), at a 10 V bias. At a 10 V bias, a high photoresponsivity of 0.57, 0.36, 0.31, 0.27, and 0.25A/W was achieved at x=0 (380nm) to x=0.36 (310nm), respectively.
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