The study of poly silicone thin film process using excimer laser annealing and its characterization

• Main Authors: Seng-Lung Lin, 林昇龍
• Other Authors: Ming-Chang Shih
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/60444558160677672823

碩士 === 國立高雄大學 === 電機工程學系--先進電子構裝技術產業研發碩 === 95 === In this thesis, the excimer laser annealing (ELA) process for polycrystalline silicon thin film by ArF (193nm) and KrF (248nm) excimer laser has been studied. Sample of amorphous silicon on p-type silicon (100) substrate was grown by CVD (Chemical vapor deposition) process, then by excimer laser annealing at various fluencies. By using the Raman spectroscopy stimulated by a Nd:YAG double frequency solid state laser at 532 nm, it is able to identify the phase of amorphous silicon and polycrystalline silicon which correspond to Raman shift at 480 cm-1 and 518 cm-1. In addition, AFM (Atom force microscopy) and SEM (Scanning electron microscopy) were used to measure the grain size of the polycrystalline silicon. It is more effective to induce polycrystalline silicon by KrF (248 nm) excimer laser. Grain size of 0.9 μm has been achieved with laser fluencies of 31.7 mJ/cm2 ~ 40.7 mJ/cm2, and peeling of film at fluency higher than 80 mJ/cm2.