Effects of Electrostatic Discharge High-Field Current Impulse on Metal-Oxide-Semiconductor Devices
博士 === 國立臺灣大學 === 電機工程學研究所 === 95 === The effects of ESD high-field current impulse on gate oxide and made comparisons with the results of dc stress is studied in this thesis. Including generation of stress-induced trapped charges and the breakdown mechanisms were proposed. Besides, the density and...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57756138998579700868 |