Electroluminescence properties of Ge dots LEDs with or without Si buffer layer

• Main Authors: Ying-Chih Lai, 賴盈至
• Other Authors: 管傑雄
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/16417112309355856338

碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === The advantage of the optical electronic component made up by silicon andgermanium materials is that it could be fully compatible with the Si-based microelectronic chips. Therefore, the cost of the fabrication could decrease. In addition, the growth techniques for quantum heterojunction structures are in advanced and then the heterojunction structure of silicon or germanium has been studied far and wide recently. In this study, the light-emitting diodes (LEDs) with multi-periods of Si/Ge quantum dots structures are used. The ten periods Si/Ge quantum dots structure are grown by UHV/CVD system .There are two samples. One of our samples is called 1296(no buffer), which is grown P+doped regon right after growing ten periods Si/Ge quantum dots structure.Another sample called 1123(Si buffer),which is grown a layer of Si buffer before growing P+doped regon, is different from 1296(no buffer).To grow the layer of Si buffer is insulate active region from P+doped region. We will focus the mechanism of two samples. The study starts by the measurements of the EL spectra with different temperature. We will discuss the mechanism for our sample. After that, we will use the method of pre-anneal to prove our mechanism is right.