Investigation of Strain-Temperature Stress Effects on the Characteristics of MOS Capacitors with Ultra-thin Gate Oxides
碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === With the scaling of MOS devices, the thickness of oxides becomes thinner. Nevertheless, dielectrics are requested to have higher ability to withstand the current. Therefore, it becomes an important topic to promote the quality of silicon-dioxide dielectrics. How...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29739158998042809078 |