| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === With the scaling of MOS devices, the thickness of oxides becomes thinner.
Nevertheless, dielectrics are requested to have higher ability to withstand the current.
Therefore, it becomes an important topic to promote the quality of silicon-dioxide
dielectrics. However, the increasing of power densities cause thermal and stress issue
more seriously. In this thesis, we studied the effects of strain-temperature stress on the
electrical characteristics of MOS devices with gate oxides grown by different
techniques, and tried to promote the oxide quality by the proposed method. From the
experimental results, we found that suitable tensile strain-temperature stress would
promote the quality of MOS gate oxides. The electrical characteristics on tensile
strain-temperature stress are investigated. While observing the C-V characteristics of
MOS (n) capacitors, we found that the gate capacitance came to negative at low
measured frequency. We infer the phenomenon is related to the gate leakage current
by kinds of analyses. Thus, after tensile strain-temperature stress, the negative
capacitance phenomenon can be reduced.
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