Characteristics of SiGe/Si Heterojunction Solar Cell

• Main Authors: Kao-Wu Tseng, 曾高吾
• Other Authors: Hung-Hsiang Cheng
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/35022300992060575424

碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === In recent years, SiGe/Si heterostructure has attracted great attention for its applications in electronic devices and optoelectronic devices. In this thesis, we use the molecular beam epitaxy technology to deposit SiGe alloy on silicon substrate to substitute for the conventional silicon material and to improve the conversion efficiency of solar cells. The influence of the doping concentration and thickness of single-crystal on device characteristics are discussed. Finally, we use simulator of solar energy AM1.5G under the illuminated condition. The four important parameters are conversion efficiency, short-circuit current, open-circuit voltage and fill factor. We measure these parameters to analyze and evaluate the performance of solar cells. Four important factors will determine the overall performance of solar cell.