Electronic surface states of semiconductor superlattices

• Main Authors: Hsing-Chi Chen, 陳星旗
• Other Authors: Wen-Jen Hsueh
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/58052927614101135740

碩士 === 國立臺灣大學 === 工程科學及海洋工程學研究所 === 95 === The main purpose of this thesis is to study the electron surface states of GaAs/AlGaAs superlattices. In the study, transfer matrix method is used to derive the dispersion relation equation and the surface states equation of superlattices. In addition, the results of minibands and surface states by changing the parameters of superlattices, including quantum well layer width, barrier layer width and potential height, and surface layer potential height are studied. From these results, the electron transportation in different superlattices structures is presented. In calculating surface states, it may obtain more spurious solutions and mistakes in some special cases by traditional method. But these problems can be avoided by the present method.When analyzing surface states and minibands, surface states do not appear in the two-layer symmetric termination superlattices, but they appear in the four-layer ones, especially for the two-barrier basis superlattices, surface states appear more obviously.