Analysis of Microstructure Evolution of RF Sputtered Ti1(subscript -x)Al(subscript x)N Affected by Intermediate Layer and Heat Treatment

• Main Authors: Liu, Iu-Hsien, 劉祐銜
• Other Authors: 楊哲人
• Format: Others
• Language: en_US
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/00580715575925600020

碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 95 === In this investigation, the two different hard protective thin film structures: TiAlN/Si&WC and TiAlN/AlN/Si&WC are deposited by RF sputtering system. The advantages of sputtering system is lower surface roughness, higher adhesion and more precise in film thickness than that of arc deposition system. The concentration of aluminum is no less than 70%. After depositing these two different film structures, these samples will be annealed at different temperature in vacuum. The mechanical properties of these films such as hardness, adhesion, surface roughness are measured by nano-indentation, scratch test and atomic force microscopy respectively. XTEM (cross-section transmission electron microscopy) can study the evolution of the microstructure and the interface regions of the films precisely. In this study, the evolution of the microstructure and the interface regions will be investigated by high- resolution transmission electron microscopy (HRTEM), and the result will be related to the mechanical properties.