Reliability and Stability of Electro-Optical semiconductorDevice

• Main Authors: Tzu-Pu Lin, 林子樸
• Other Authors: 黃建璋
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/95106042785235025114

碩士 === 臺灣大學 === 光電工程學研究所 === 95 === Firstly, silicon based thin film transistors are commonly used in active-matrix LCD’s (AMLCD’s) as pixel switches or drivers. However, the performance of conventional TFT is far from satisfactory to meet the high speed and current drive requirements for the application of LCD. In recent years, a lot of efforts have been spent to improve the processes and devices structures of TFTs to obtain better performance. Finding new materials, such as ZnO. The Si-based TFTs have several deficiencies, such as low electron mobility、 opaque and high temperature process. The ZnO is a new material has the high mobility and crystalloid. In this research, a room temperature process method is proposed to obtain high quality ZnO thin films for TFTs. By changing the process conditions, and measurement the electrical property shift with time. We want to obtain the reliability and stability and to analysis the mechanism.