The Characterization Study of RuO2-Al2O3 and Bi2Te3 for Infrared Sensors

• Main Authors: Shang-Jen Tsai, 蔡尚任
• Other Authors: Y.Y. Chen
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/29062093507974038581

碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 95 === This research mainly studied material characteristics and the applications of infrared sensors. The experiment was divided into two parts, one was bolometer and the other was thermoelectric. In bolometer experiment, I choose to use RuO2 and Al2 O3. The optimal conditions were 30% RuO2-70% Al2O3 at 100℃ by sputter. The TCR can reach up to -1.66% / K; and the resistivity was about 1.46KΩ at 300 K. The frequency was under the condition of 0.2∼20Hz. We found that the maximal response was at 0.2 Hz and resulted to 517.34274 (VW-1 ). In thermoelectric experiment, I selected Bi2Te3 . Bi2Te3 ¬is the best thermoelectric material at room temperature. The experiment applied electrochemistry deposits in SU8 holes. The ideal ratio for the experiment was Bi =0.004M and Te =0.005M. We found that there was better thermoelectric efficiency after annealing the sample at 250℃. The Seebeck coefficient can reach up to -68μV. The frequency was under the condition of 0.2∼10Hz. We found that the maximal response was at 1 Hz and resulted to 401.6688 (VW-1 ).