A Study on Property Improvements of Sputtered Copper Films Using Glass-Forming Film and Oxide

碩士 === 國立臺灣海洋大學 === 材料工程研究所 === 95 === In this study, sputtered Cu film properties have been improved using a glass-forming (Zr45.7Cu32.2Al14.3Ni7.8) as the barrier layer and doping with small amounts of oxygen. For this Zr-based film alone (hereafter called the Zr layer), it shows nanocrystalline s...

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Main Authors: Yia-Ling Chou, 周雅玲
Other Authors: J. P. Chu
Format: Others
Language:en_US
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/04724297276028792391
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spelling ndltd-TW-095NTOU51590182016-05-13T04:14:25Z http://ndltd.ncl.edu.tw/handle/04724297276028792391 A Study on Property Improvements of Sputtered Copper Films Using Glass-Forming Film and Oxide 利用非晶薄膜及氧化物提升濺鍍銅鍍層性質之研究 Yia-Ling Chou 周雅玲 碩士 國立臺灣海洋大學 材料工程研究所 95 In this study, sputtered Cu film properties have been improved using a glass-forming (Zr45.7Cu32.2Al14.3Ni7.8) as the barrier layer and doping with small amounts of oxygen. For this Zr-based film alone (hereafter called the Zr layer), it shows nanocrystalline structure (as-deposited) transformed into a fully amorphous structure and then to crystalline structure upon annealing at high temperatures, consistent with a previous study. For the barrier studies in the Cu/Zr/Si, the maximum stable temperature where the film resistance is not changed are 540□C, 530□C, 520□C, 540□C and 550□C for barrier layers in thickness of 20 nm, 10 nm, 4 nm, 1 nm and 0.3 nm, respectively. However, the copper silicides are formed (as shown in XRD results) before the increases in resistance. In TEM results, the copper silicides are present for the barrier in thickness of 0.3 and 1 nm (called Cu/Zr(0.3 nm)/Si and Cu/Zr(1 nm)/Si ) after annealing of Cu/barrier/Si and the results are consistent with XRD results. For the Cu/Zr(20 nm)/Si structure, the maximum stable temperatures in resistance improve 10□C after pre-annealing of barrier for 1 min at different temperatures. Thus, pre-annealing of barrier before sputter–depositing top Cu has no significant effect on the thermal stability of Cu/barrier/Si. With the XRD and FIB results showing the presence of copper silicides, the increases in resistance in Cu/barrier/Si are not observed. In the adhesion improvement study, the adhesion of Cu film on barrierless Si was enhanced significantly by introducing minor amounts of O2 into Cu films. J. P. Chu 朱瑾 2007 學位論文 ; thesis 120 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立臺灣海洋大學 === 材料工程研究所 === 95 === In this study, sputtered Cu film properties have been improved using a glass-forming (Zr45.7Cu32.2Al14.3Ni7.8) as the barrier layer and doping with small amounts of oxygen. For this Zr-based film alone (hereafter called the Zr layer), it shows nanocrystalline structure (as-deposited) transformed into a fully amorphous structure and then to crystalline structure upon annealing at high temperatures, consistent with a previous study. For the barrier studies in the Cu/Zr/Si, the maximum stable temperature where the film resistance is not changed are 540□C, 530□C, 520□C, 540□C and 550□C for barrier layers in thickness of 20 nm, 10 nm, 4 nm, 1 nm and 0.3 nm, respectively. However, the copper silicides are formed (as shown in XRD results) before the increases in resistance. In TEM results, the copper silicides are present for the barrier in thickness of 0.3 and 1 nm (called Cu/Zr(0.3 nm)/Si and Cu/Zr(1 nm)/Si ) after annealing of Cu/barrier/Si and the results are consistent with XRD results. For the Cu/Zr(20 nm)/Si structure, the maximum stable temperatures in resistance improve 10□C after pre-annealing of barrier for 1 min at different temperatures. Thus, pre-annealing of barrier before sputter–depositing top Cu has no significant effect on the thermal stability of Cu/barrier/Si. With the XRD and FIB results showing the presence of copper silicides, the increases in resistance in Cu/barrier/Si are not observed. In the adhesion improvement study, the adhesion of Cu film on barrierless Si was enhanced significantly by introducing minor amounts of O2 into Cu films.
author2 J. P. Chu
author_facet J. P. Chu
Yia-Ling Chou
周雅玲
author Yia-Ling Chou
周雅玲
spellingShingle Yia-Ling Chou
周雅玲
A Study on Property Improvements of Sputtered Copper Films Using Glass-Forming Film and Oxide
author_sort Yia-Ling Chou
title A Study on Property Improvements of Sputtered Copper Films Using Glass-Forming Film and Oxide
title_short A Study on Property Improvements of Sputtered Copper Films Using Glass-Forming Film and Oxide
title_full A Study on Property Improvements of Sputtered Copper Films Using Glass-Forming Film and Oxide
title_fullStr A Study on Property Improvements of Sputtered Copper Films Using Glass-Forming Film and Oxide
title_full_unstemmed A Study on Property Improvements of Sputtered Copper Films Using Glass-Forming Film and Oxide
title_sort study on property improvements of sputtered copper films using glass-forming film and oxide
publishDate 2007
url http://ndltd.ncl.edu.tw/handle/04724297276028792391
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