Investigation on Technology of Amorphous Silicon Thin-Film Transistor
博士 === 國立清華大學 === 電子工程研究所 === 95 === A low-dielectric-constant (low-k) material, siloxane-based hydrogen silsesquioxane (HSQ), is investigated as a passivation layer in bottom-gate hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs). The low-k HSQ film passivated on TFT promotes the b...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26476978410006939144 |