The Physical and Electrical Properties of Metal (Al)-Oxide-Si Capacitors with Dy2O3 and ALD-based HfO2 Gate Oxide
碩士 === 國立清華大學 === 產業研發碩士積體電路設計專班 === 95 === In this thesis, Metal-Oxide-Si (MOS) capacitors with Dy2O3 and HfO2 gate dielectrics were fabricated and investigated. The Dy2O3 and HfO2 gate dielectrics were deposited by RF magnetron sputtering and atomic layer chemical vapor deposition (ALD), respectiv...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32569433765016039307 |