The Physical and Electrical Properties of Metal (Al)-Oxide-Si Capacitors with Dy2O3 and ALD-based HfO2 Gate Oxide
碩士 === 國立清華大學 === 產業研發碩士積體電路設計專班 === 95 === In this thesis, Metal-Oxide-Si (MOS) capacitors with Dy2O3 and HfO2 gate dielectrics were fabricated and investigated. The Dy2O3 and HfO2 gate dielectrics were deposited by RF magnetron sputtering and atomic layer chemical vapor deposition (ALD), respectiv...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32569433765016039307 |
| Summary: | 碩士 === 國立清華大學 === 產業研發碩士積體電路設計專班 === 95 === In this thesis, Metal-Oxide-Si (MOS) capacitors with Dy2O3 and HfO2 gate dielectrics were fabricated and investigated. The Dy2O3 and HfO2 gate dielectrics were deposited by RF magnetron sputtering and atomic layer chemical vapor deposition (ALD), respectively. The temperature dependence of the conduction mechanisms for Al/Dy2O3 and HfO2/p-Si MOS capacitors was studied.
XRD analysis revealed that Dy2O3 and HfO2 thin films were became polycrystalline when annealed in N2 ambient at 4000C for 1 minute. From SIMS analysis, the data for Dy2O3/p-Si structure showed Dy diffusion in Si in N2 ambient annealed at 400℃ and Si diffusion in Dy2O3 in N2 ambient annealed at 700℃. The data for ALD HfO2/p-Si structure revealed Hf diffusion Si in N2 ambient annealed at 400℃. TEM analysis revealed that an interface layer (IL) was formed between the annealed high-κ film (Dy2O3 and HfO2) and Si substrate.
The dominant conduction mechanism of Al/Dy2O3/p-Si structure at high temperature (500K) is Schottky emission in high electric fields (2.9~4.8 MV/cm).The dominant mechanism of Al/ALD HfO2/p-Si structure at high temperature (>420K) is Schottky emission in high electric fields (1.56~2.25 MV/cm) and Poole-Frenkel emission in low electric fields (0.36~0.81 MV/cm). Experimental results showed that the Al/HfO2 barrier height and electron effective mass are 0.82 eV and 0.03m0, respectively. The extracted Weibull slope (��) for different temperatures of 250C, 850C and 1250C were found to be 7. The activation energy of Dy2O3 thin film calculated from the QBD63 plots was about 23meV.
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