| Summary: | 碩士 === 國立清華大學 === 材料科學工程學系 === 95 === The synthesis and characterization of Ga2O3 nanowires, nanobelts, as well as Au-filled Ga2O3 nanotubes have been conducted. Ga2O3 nanotubes were fabricated by an effective one-step chemical vapor deposition (CVD) approach. Our approach is based on the physical evaporation of gallium oxide powder through vapor–liquid–solid, or vapor-solid mechanism and surface diffusion growth mechanism. The reaction is processed under Ar gas flow and after the Ga2O3 source powder was reduced by graphite, the introduction of O2 will then enable the growth of Ga2O3 nanostructures on Si (001) substrates. Different morphologies of 1-D Ga2O3 nanostructures are controlled via different pressure. The length nanostructures can be controlled by the reaction time.
For Au-filled Ga2O3 nanostructures, the gold interior was introduced by capillarity. Linear thermal expansion of Au within single crystalline Ga2O3 shell up to 800 ℃ was observed by in situ transmission electron microscopy. Since both Ga2O3 and Au possess excellent thermal and chemical stability, the structure can be used as a wide range high-temperature nanothermometer for localized region.
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