Study on (Pr,Ca)MnO3 Thin Films for Nonvolatile Resistance Random Access Memory Application

Study on (Pr,Ca)MnO3 Thin Films for Nonvolatile Resistance Random Access Memory Application

碩士 === 國立清華大學 === 材料科學工程學系 === 95 ===

Bibliographic Details
Main Authors:	Wu Cheng-Wei, 吳政緯
Other Authors:	Wu Tai-Bor
Format:	Others
Language:	zh-TW
Published:	2007
Online Access:	http://ndltd.ncl.edu.tw/handle/49412265183027170554

Similar Items

Characteristics of (Pr,Ca)MnO3 thin films on LaNiO3-electrodized Si substrate for nonvolatile resistance random access memory application
by: Wen-Yuan Chang, et al.
Published: (2006)

Characteristics Investigation of MnO Resistance Random Access Memory Thin Films
by: Zong-Hsun Wu, et al.
Published: (102)

Investigation of Polyimide thin films for Nonvolatile Resistance Random Access Memories
by: Meng-ru Ye, et al.
Published: (2011)

Investigation of CdS Thin Film for Application of Nonvolatile Resistance Random Access Memories
by: Yu-Ping Hsiao, et al.
Published: (2012)

Resistance switching characteristics in ZnO thin films for nonvolatile random access memory applications
by: Jui-Ming Tsai, et al.
Published: (2008)

Investigation and characterization of Au nanoparticles incorporated polymer thin films for nonvolatile resistance random access memories
by: Pei-YingLai, et al.
Published: (2011)

Investigation of Copper Oxide Thin Films for Nonvolatile Resistive Memory
by: Jing-Ming Hsu, et al.
Published: (2009)

Pressure effects on the transport properties of La₀.₆₇Ca₀.₃₃MnO₃ thin films.
Published: (2001)

Phase Separation and Persistent Magnetoresistive Memory Effect in La0.375Pr0.25Ca0.375MnO3 Thin Films
by: 蔡於璁
Published: (2006)

Enhanced magnetoresistance in La₀.₆₇Ca₀.₃₃MnO₃/Pr₀.₆₇Ca₀.₃₃MnO₃ superlattices with ultra-sharp metal-insulator transition =: 金屬-絶緣轉變非常明顯的La₀.₆₇Ca₀.₃₃MnO₃/Pr₀.₆₇Ca₀.₃₃MnO₃超晶格薄膜的磁致電阻增强現象.
Published: (2002)

Impact of Imidization on Polyimide-based Nonvolatile Resistance Random Access Memories
by: Chun_Min Ko, et al.
Published: (2014)

Pr0.5Ca0.5MnO3 thin films deposited on LiNbO3 substrates
by: Araújo J. P., et al.
Published: (2013-01-01)

Optimization of Pr0.9Ca0.1MnO3 thin ﬁlms with varying in-situ oxygen annealing treatments
by: Paturi P., et al.
Published: (2013-01-01)

Memory Effect in Thin Thermocycling-modified La0.67Ca0.33MnO3 Films
by: Fiodoras ANISIMOVAS, et al.
Published: (2012-03-01)

Strain and memory effects in ultra-thin La0.67Ca0.33MnO3 films.
Published: (2003)

Nonvolatile Resistive Random Access Memory Based on Microwave Plasma Chemically Vapor Deposited Nanodiamond Films
by: Chi-ChunLu, et al.
Published: (2013)

Shallow Trench Isolation Sidewall edge Resistive Random Access Memory Integrated Nonvolatile Static Random Access Memory
by: Hsu, Meng-Yin, et al.
Published: (2017)

Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application
by: Zhenhua Tang, et al.
Published: (2013-12-01)

Synthesis of tungsten oxide and its application to electrochromic devices and nonvolatile resistance random access memories
by: Wei-TingWu, et al.
Published: (2011)

Visible magnetic circular dichroism spectroscopy of the Pr0.8Sr0.2MnO3 and Pr0.6Sr0.4MnO3 thin films
by: I. Edelman, et al.
Published: (2014-05-01)

Thickness and vacuum annealing effects in single-crystal La₀.₆₇Ca₀.₃₃MnO3 thin films.
Published: (2000)

Anisotropic magnetoresistance of La2/3Ca1/3MnO3 thin film.
Published: (2004)

Structural and Resistance switching characteristics of Y2O3 and Tb2O3 thin films for nonvolatile random access memory applications
by: Kai Ming Chen, et al.
Published: (2010)

Testing and Yield Enhancement Methods for Nonvolatile Random Access Memories
by: Chen, Ching-Yi, et al.
Published: (2012)

Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films
by: Xianfei Guo, et al.
Published: (2019-06-01)

Structure, magnetism and electrical transport in epitaxial La0.23Pr0.41Ca0.36MnO3 thin films: Consequences of film thickness
by: Sandeep Singh, et al.
Published: (2018-09-01)

Magnetorresistência colossal em La5/8-yPr yCa3/8MnO3 Magnetoresistance in La5/8-yPr yCa3/8MnO3
by: S. H. Masunaga, et al.
Published: (2007-09-01)

Oxygen isotope effects in La0.67Ca0.33MnO3 thin films.
Published: (2005)

Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism
by: Hsueh-chih Tseng, et al.
Published: (2013)

Investigation of Nonvolatile Polymer Resistive Random Access Memory with CdSe/ZnS Quantum Dots
by: Tai-HsiangChang, et al.
Published: (2011)

The Physical Properties of La0.67Ca0.33MnO3/ La0.67Sr0.33MnO3 Multilayer Thin film
by: Shie, Bo-Shiuan, et al.
Published: (2009)

The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application
by: Jian-bing Huang, et al.
Published: (2012)

Bottom-gate Poly-Si Thin Film Transistor Nonvolatile Memories with
by: Lu, Ray-Chi, et al.
Published: (2013)

The Impact of Morphology and Crystallization Condition on Thin Film Transistors and Nonvolatile Memories
by: Liu, Shao-Xuan, et al.
Published: (2012)

Manganous oxide activity measurements in MnO/TiO², MnO/TiO²-SiO², MnO/TiO²- CaO, MnO-TiO²-SiO²-CaO and MnO-MgO-SiO² slag mixtures
by: Martin, E.
Published: (1974)

The Low Temperature Specific Heat of Pr0.65Ca0.35MnO3
by: Zhiyong Han, et al.
Published: (2014-01-01)

The study of colossal magnetoresistance La0.67Ca0.33MnO3 thin film deposition
by: Chia-Ling Huang, et al.
Published: (2000)

Studies of (La,Ca)MnO[sigma] thin film with giant magnetoresistance prepared by facing target sputtering technique.
Published: (1996)

The interface effect on Magnetoresistance and Magnetization of La0.7Ce0.3MnO3 and La0.7Ca0.3MnO3 thin films
by: Chen-Yung Hung, et al.
Published: (2004)

The interface effect on Magnetoresistance and Magnetization of La0.7Ce0.3MnO3 and La0.7Ca0.3MnO3 thin films
by: Chen-Yung Hung, et al.
Published: (2004)

Cannot write session to /tmp/vufind_sessions/sess_uoe3klcn63oel3kplbdq34ng0i