Fabrication and characterization of mesa-type Gallium Nitride based heterojunction bipolar transisrors
碩士 === 國立清華大學 === 光電工程研究所 === 95 === There are more and more applications based on GaN related optoelectronics and plastic fiber communication happens to be one of the potentials. This experiment makes use of GaN material to make out heterojunction bipolar transistors mainly. Before making the devi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79098281603684672498 |