Capacitance-Voltage Study of InN MOS Structure with Different Oxide Thickness

• Main Authors: Chia-hsiu Tsai, 蔡嘉修
• Other Authors: L. W. Tu
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/9rj8f5

碩士 === 國立中山大學 === 物理學系研究所 === 95 === InN films were grown on Si(111) wafer with AlN buffer layer by plasma-assisted molecular beam epitaxy (PAMBE). The sample went through a conventional cleaning process which involved sequential rinsing in acetone (5 mins), isopropyl alcohol (5 mins), de-ionized water (5 mins), and blown dry with nitrogen before SiO2 deposited. We used E-beam to deposit SiO2 thin film on InN. Ohmic contact (Ti) was prepared by e-beam evaporation. The system used to measure the high-frequency and low-frequency consists of Keithley 590 analyzer and Quasistatic CV meter. At last we added the capacitance-voltage study of the Si MOS structure and the research of growing high quality AlN for high quality InN.