M plane GaN film growth by PAMBE and CL study

M plane GaN film growth by PAMBE and CL study

碩士 === 國立中山大學 === 物理學系研究所 === 95 === Gamma-phase lithium aluminate (LiAlO2) single crystal is grown by Czochralski pulling method and a-plane LiAlO2(LAO) is chosen as the substrate for subsequent gallium nitride (GaN) epitaxial growth by plasma-assisted molecular beam epitaxy (PAMBE). The lattice mi...

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Bibliographic Details
Main Authors:	Huei-Min Huang, 黃煇閔
Other Authors:	Prof. Li-Wei Tu
Format:	Others
Language:	zh-TW
Online Access:	http://ndltd.ncl.edu.tw/handle/55hgju

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