M plane GaN film growth by PAMBE and CL study
碩士 === 國立中山大學 === 物理學系研究所 === 95 === Gamma-phase lithium aluminate (LiAlO2) single crystal is grown by Czochralski pulling method and a-plane LiAlO2(LAO) is chosen as the substrate for subsequent gallium nitride (GaN) epitaxial growth by plasma-assisted molecular beam epitaxy (PAMBE). The lattice mi...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/55hgju |