| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 95 === Gamma-phase lithium aluminate (LiAlO2) single crystal is
grown by Czochralski pulling method and a-plane LiAlO2(LAO) is
chosen as the substrate for subsequent gallium nitride (GaN)
epitaxial growth by plasma-assisted molecular beam epitaxy
(PAMBE). The lattice mismatch between the nitride and the
substrate is greatly reduced due to small lattice mismatch
of~0.3% between [0001]GaN and [010]LAO and of~1.7% between
[11-20]GaN and [001]LAO in the plane of the substrate LAO(100).
Pure hexagonal [10-10]GaN is successfully grown directly
on the LAO substrate without buffer layer. Crystal quality and
properties are analyzed through a series of measurements,
including reflection high-energy electron diffraction (RHEED),
field-emission electron microscopy (FESEM), electron backscatter
diffraction (EBSD), x-ray diffraction and cathodo
luminescence (CL).
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