Electrical Analysis and Physics Mechanism of Dual-gate Amorphous Silicon Thin Film Transistor

• Main Authors: Min-chen Chen, 陳敏甄
• Other Authors: Ting-Chang Chang
• Format: Others
• Language: en_US
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/4u3r72

碩士 === 國立中山大學 === 物理學系研究所 === 95 === The traditional displayer – CRT has already been substituted by liquid crystal displayer (LCD).The a-Si TFT is used to be a switch, while the size of the displayer increases, the require of the performance and quality of TFTs is more and more better. Therefore, it is very important subject to study the stability and to improve the performance of a-Si TFTs. In this thesis, we fabricate another new structure (asymmetry dual-gate TFTs).For asymmetry dual-gate TFTs, the ITO back gate is extended to the middle of the channel and only covered on the drain contact. The new structure has the advantages of dual-gate TFTs. With dual-channel conduction, it exhibit higher Ion and lower photo leakage current performance than the conventional inverted staggered TFTs. In addition, we use the asymmetry dual-gate structure to investigate how the parasitic capacitance influences the feed-through voltage by C-V measurement. We also to investigate the influences of electrical characteristics with the ITO back gate whether or not overlap the source contact. The asymmetry in on current with source-drain swapping can be attributed to the difference in the ITO back gate whether overlaps the source contact. Finally, it simulated the process of the degradation on the TFTs to find the stability mechanism of the TFTs.