| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 95 === We study AlGaN/GaN heterostucture using temperature dependent micro-photoluminescence. Detailing its principle, operation process and analysis is to provide usage experiences for posterity''s reference. The experiment''s results emphasize analysis in the photoluminescence spectrum of the GaN in the heterostructure. We believe the peaks 3.486eV, 3.405eV and 3.310eV provided from Free Exciton A, FXA-1LO and FXA-2LO respectively by experience in the cultural heritage.And the fitting result of FXA peak with Gaussian curve shows the major peak is composed by (D0,X), FXA and FXB. Finally, we analyze the major peaks'' characteristics varied with the temperature.
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