Low Temperature Induced Crystallization of Amorphous Silicon Film by Nano Nickel Particles

• Main Authors: Wen-Shian Wu, 吳文獻
• Other Authors: Chuen-Shii Chou
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/71187833068262688104

碩士 === 國立屏東科技大學 === 機械工程系所 === 95 === In this research, we use nano nickel particles mixed with alcohol to apply on the silicon substrate, along with a high temperature oven to lower the nano nickel particles’ temperature in order to obtain grain. Meanwhile, we change the different parameters, like the annealing temperature and times of a high temperature Muffle Furnace to measure the ultra structures of the surface of Silicon Film, element analysis, and the changes of poly-silicon, by using FE-SEM, XRD, and Ramna, respectively, for observing and recording, the particular effects of these factors. The consequence shows that in the annealing temperature of – 400℃, there was some poly-silicon grown in an hour; the growth rate is 10 times faster than using a furnace for annealing. In the same annealing time, the higher the temperature is, the faster the poly-silicon grows and gets smaller. In the same annealing temperature, the longer the time spent, the bigger the silicon crystalline grows.