Investigation and Logic Application of InGaP/InGaAsDoped-Channel High Electron MobilityField-Effect Transistors
碩士 === 國立高雄師範大學 === 物理學系 === 95 === In this thesis, based on InGaP/InGaAs doped-channel pseudomorphic heterostructure field-effect transistors (HFETs), novel integrated enhancement/depletion-mode devices are addressed. The devices could exhibit high gate barrier, high turn-on voltage, high linearly...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37352121710286230212 |