Design and Fabrication of Diffraction Optical Element applied to Resonant Cavity LED
碩士 === 國立高雄第一科技大學 === 光電工程研究所 === 95 === Abstract In this thesis, providing new application strategy, this research proposal combines RCLED (Resonant Cavity LED) and DOE (Diffraction Optical Element) processing technology into a single Opto-electric Semiconductor Device. To form diffraction RCLED (D...
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ndltd-TW-095NKIT51240032016-05-20T04:18:04Z http://ndltd.ncl.edu.tw/handle/46304083330703746603 Design and Fabrication of Diffraction Optical Element applied to Resonant Cavity LED 繞射光學元件應用於共振腔發光二極體之設計與製作 Chao-Liang Wu 吳昭諒 碩士 國立高雄第一科技大學 光電工程研究所 95 Abstract In this thesis, providing new application strategy, this research proposal combines RCLED (Resonant Cavity LED) and DOE (Diffraction Optical Element) processing technology into a single Opto-electric Semiconductor Device. To form diffraction RCLED (DOE-RCLED), DOE surface profile can be integrated upon SiO2 layer of RCLED structure utilizing semiconductor processing. Such DOE-RCLED can control Spatial Distribution of Emitting Light Energy. In this thesis, we use Scalar Diffraction Theory and Dammann Grating concept to accomplish the design of DOE upon SiO2 layer of RCLED with Semiconductor Manufacturing Processes. To simplify the process, the design concept of Binary Phase Fourier Grating is applied to acquire DOE surface profile through Matlab program calculation, and then utilize G-Solver to adjust grating depth and geometric shape. From the result of the simulation, we find that for the designed DOE geometric structure, Spatial Distribution of Emitting Light Energy has the best performance. And then fabricate the DOE by semiconductor technique. Finally, we set up a optical system to test and verify the optical function that we designed. Tsai-Chun Liang 梁財春 2007 學位論文 ; thesis 98 zh-TW |
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碩士 === 國立高雄第一科技大學 === 光電工程研究所 === 95 === Abstract
In this thesis, providing new application strategy, this research proposal combines RCLED (Resonant Cavity LED) and DOE (Diffraction Optical Element) processing technology into a single Opto-electric Semiconductor Device. To form diffraction RCLED (DOE-RCLED), DOE surface profile can be integrated upon SiO2 layer of RCLED structure utilizing semiconductor processing. Such DOE-RCLED can control Spatial Distribution of Emitting Light Energy.
In this thesis, we use Scalar Diffraction Theory and Dammann Grating concept to accomplish the design of DOE upon SiO2 layer of RCLED with Semiconductor Manufacturing Processes. To simplify the process, the design concept of Binary Phase Fourier Grating is applied to acquire DOE surface profile through Matlab program calculation, and then utilize G-Solver to adjust grating depth and geometric shape. From the result of the simulation, we find that for the designed DOE geometric structure, Spatial Distribution of Emitting Light Energy has the best performance. And then fabricate the DOE by semiconductor technique. Finally, we set up a optical system to test and verify the optical function that we designed.
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author2 |
Tsai-Chun Liang |
author_facet |
Tsai-Chun Liang Chao-Liang Wu 吳昭諒 |
author |
Chao-Liang Wu 吳昭諒 |
spellingShingle |
Chao-Liang Wu 吳昭諒 Design and Fabrication of Diffraction Optical Element applied to Resonant Cavity LED |
author_sort |
Chao-Liang Wu |
title |
Design and Fabrication of Diffraction Optical Element applied to Resonant Cavity LED |
title_short |
Design and Fabrication of Diffraction Optical Element applied to Resonant Cavity LED |
title_full |
Design and Fabrication of Diffraction Optical Element applied to Resonant Cavity LED |
title_fullStr |
Design and Fabrication of Diffraction Optical Element applied to Resonant Cavity LED |
title_full_unstemmed |
Design and Fabrication of Diffraction Optical Element applied to Resonant Cavity LED |
title_sort |
design and fabrication of diffraction optical element applied to resonant cavity led |
publishDate |
2007 |
url |
http://ndltd.ncl.edu.tw/handle/46304083330703746603 |
work_keys_str_mv |
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