| Summary: | 碩士 === 國立高雄第一科技大學 === 光電工程研究所 === 95 === Abstract
In this thesis, providing new application strategy, this research proposal combines RCLED (Resonant Cavity LED) and DOE (Diffraction Optical Element) processing technology into a single Opto-electric Semiconductor Device. To form diffraction RCLED (DOE-RCLED), DOE surface profile can be integrated upon SiO2 layer of RCLED structure utilizing semiconductor processing. Such DOE-RCLED can control Spatial Distribution of Emitting Light Energy.
In this thesis, we use Scalar Diffraction Theory and Dammann Grating concept to accomplish the design of DOE upon SiO2 layer of RCLED with Semiconductor Manufacturing Processes. To simplify the process, the design concept of Binary Phase Fourier Grating is applied to acquire DOE surface profile through Matlab program calculation, and then utilize G-Solver to adjust grating depth and geometric shape. From the result of the simulation, we find that for the designed DOE geometric structure, Spatial Distribution of Emitting Light Energy has the best performance. And then fabricate the DOE by semiconductor technique. Finally, we set up a optical system to test and verify the optical function that we designed.
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