Preparation and Characterization of As2(Te1-xSx)3 Compound

• Main Authors: Tzu-Chieh Lin, 林子傑
• Other Authors: C. C. Wu
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/6tjpc7

碩士 === 國立東華大學 === 材料科學與工程學系 === 95 === In this study, Arsenic chalcogenides As2(Te1-xSx)3 crystals(x=0、0.1、0.3)、amorphous bulks and films(x=0、0.1、0.3、0.7、0.9、1.0) were grown by vertical Bridgman method、melt quenching and vacuum thermal evaporation . The composition and crystalline structure of ternary compounds were investigated by SEM、EPMA and X-ray techniques . The molecular vibration mode and energy band gap of the whole series compounds were examined by Raman and transmission spectra measurements. The temperature dependence of resistivity of as-grown As2(Te1-xSx)3 crystals were discussed. The values of energy band gap (Eg) of amorphous alloys with various composition (x) can be fitted by an analytical expression Eg(x)= 0.93+0.03x+ 1.28x2