Preparation and Characterization of Lanthanoid-doped (K1-xBix)Bi4Ti4O15 Thin Films by Chemical Solution Deposition Method
碩士 === 國立東華大學 === 材料科學與工程學系 === 95 === In this study, ferroelectric (K1-xBix)Bi4Ti4O15 thin films with x= 0.4, 0.45, 0.5, and 0.55 or KBT-x films, a modification of SrBi4Ti4O15 by substituting Sr with (K1-xBix), were prepared by the chemical solution deposition and investigated. Furthermore, the A-...
Main Authors: | Ching-Long Chang, 張青龍 |
---|---|
Other Authors: | Dong-Hau Kuo |
Format: | Others |
Language: | zh-TW |
Published: |
2007
|
Online Access: | http://ndltd.ncl.edu.tw/handle/kmzp48 |
Similar Items
-
Influence of Bi on dielectric properties of GaAs1−xBix alloys
by: Ulutas K., et al.
Published: (2019-06-01) -
Effect of Bi substitution on the magnetic and magnetocaloric properties of Ni50Mn35In15-xBix Heusler alloys
by: Anil Aryal, et al.
Published: (2018-05-01) -
Surface reconstructions during growth of GaAs₁-xBix alloys
by: Masnadi Shirazi Nejad, Mostafa
Published: (2010) -
Surface reconstructions during growth of GaAs₁-xBix alloys
by: Masnadi Shirazi Nejad, Mostafa
Published: (2010) -
Surface reconstructions during growth of GaAs₁-xBix alloys
by: Masnadi Shirazi Nejad, Mostafa
Published: (2010)