The studies of Surface reconstruction on the implanted Vicinal Si(111) using Reflective Second Harmonic Generation

• Main Authors: Cheng, Ching-Yuen, 鄭淨遠
• Other Authors: Lo, Kuang-Yao
• Format: Others
• Language: en_US
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/22889537840288980348

碩士 === 國立嘉義大學 === 光電暨固態電子研究所 === 95 === Second harmonic generation (SHG) is used to study the annealing effect on the low-energy implanted vicinal Si (111). The phenomena of impurity diffusion would be observed through the anisotropic contribution of C3V symmetry of surface in the SHG rotational anisotropy (RA-SHG) experiments at a series of rapid thermal annealing time, it has also been discovered the pressure exerted during annealing would impose an effect on the construction of surface. After careful examination of the results, the doping atoms at a high vacuum RTA environment (5 Torr) will instigate the precipitation status on the surface of silicon at 800℃ annealing temperature, whereas under low vacuum RTA environment (500 Torr) precipitation will be begin at 850℃. Combing with the isotropic contributions of SHG and the results of sheet resistance, we illustrate that the amounts of point defect in the silicon will increase if the precipitation effect occurs. However, at high annealing temperature (900℃), the dopant atoms had already completed behavior of surface restructure, so that precipitation phenomenon would not be happened any more. Thus, it was demonstrated normal behavior of diffusion of dopant atoms by isotropic signal of SHG measurement.