Simulation of transport properties of Single Electron Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 95 === The main purpose of this dissertation is to theoretically study the transport properties of single-electron transistors (SETs) based on the formalism derived by authors David M. T. Kuo and Y. C. Chang [arXiv:con-mat/0702095v1 (2007)]. The Coulomb staircase and Co...
Main Authors: | Ming-hsuan Chang, 張銘軒 |
---|---|
Other Authors: | 郭明庭 |
Format: | Others |
Language: | zh-TW |
Published: |
2007
|
Online Access: | http://ndltd.ncl.edu.tw/handle/19654744283782172950 |
Similar Items
-
Electron Transport in Silicon Quantum Dot Single-Electron-Transistors
by: Ming-Chou Lin, et al.
Published: (2010) -
Electron transport in nanoparticle single-electron transistors
by: Luo, Kang, 1976-
Published: (2008) -
Electron transport in single-molecule transistors
by: Chae, Dong-hun
Published: (2008) -
Modeling and simulation of single-electron transistors
by: Lee, Jia Yen, et al.
Published: (2005) -
Simulation of single-electron transistor at finite temperature
by: Tsung-pei Tao, et al.
Published: (2010)