New Variables for AC Simulation of 1–D Semiconductor Devices
碩士 === 國立中央大學 === 電機工程研究所 === 95 === In this thesis, we use new variables to process 1-D device ac simulation. We develop two methods for ac simulation. One is through the internal ac solver. The other is through AC_CKT simulator which is developed by our group. We will introduce the AC_CKT simulato...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32544547964167975642 |
| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 95 === In this thesis, we use new variables to process 1-D device ac simulation. We develop two methods for ac simulation. One is through the internal ac solver. The other is through AC_CKT simulator which is developed by our group. We will introduce the AC_CKT simulator and use some examples to show how to write the input file for the AC_CKT simulator. Then, we use an MOS capacitor as an example to measure the C-V curve under different frequencies. Finally, we will compare the simulation results of the two methods.
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