| Summary: | 碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 95 === As the metal-oxide-semiconductor device dimension shrinking, engineers need to develop breakthrough technologies to fix the more and more serious short channel effects. The selective epitaxial growth applied on the raised source/drain is an effective method to alleviate the short channel effects. This study mainly focuses on the process of the selective eptaxial growth and the device characteristics of the raised source/drain. First, we simulated the N and P doping profiles, Vt Roll-off and DIBL conditions on raised source/drain and traditional devices. Then, we processed selective epitaxial growth to form raised source/drain devices by two approaches. In the experiment results analysis, SEM, TEM and SIMS were adopted for the physical performance of the process. And, the device characteristcs were tested by electrical probes to compare the electrical performance. This study has proved that the selective eptaxial growth for raised source/drain is a feasible method and it improves the device performance in the short channel behaviors. This technology will play an important role in the nano device era.
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