A Study of Selective Epitaxial Growth (SEG) for Raised Source/Drain (RSD) Application
碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 95 === As the metal-oxide-semiconductor device dimension shrinking, engineers need to develop breakthrough technologies to fix the more and more serious short channel effects. The selective epitaxial growth applied on the raised source/drain is an effective...
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| Format: | Others |
| Language: | zh-TW |
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2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79907596195012435257 |