The study of carbon nanotubes synthesis in the plug structure

• Main Authors: Kuan-Ting Chen, 陳冠廷
• Other Authors: Chang-Ping Chou
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/57901687636793468290

碩士 === 國立交通大學 === 機械工程系所 === 95 === In the recent, how to achieve the development of manufacture using CNTs as interconnection material became an interesting issue. The aim of this thesis is describe the synthesis of carbon nanotubes (CNTs) from the plug. The microwave plasma chemical vapor deposition (MPCVD) is employed for CNTs synthesized. An experiment was conducted to elucidated plug manufacture, study of parameters, metallization of CNTs, the electronic conduction property associated with horizontally CNTs. In the plug manufacture, the SiO2/Ni/TiN/Si system was obtained by PVD deposition, the selected region was created via photolithography and dry etching. For the pretreatment, the Ni-coated substrate is processing using H2 plasma with various flow rates. The Ni-coated substrate were examined by the scanning electron microscopy and the high-resolution transmission electron microscopy. For the study of parameters, the nanoscale Ni-catalytic seeds are formed on the TiN layer by H2 plasma treatment at the 350 and 450°C pretreatment. It is found that the size and morphology of Ni-catalytic became granular seeds in plug structure with 450°C. In the synthesis of CNTs, the length and density are controllable using CVD method was observed. Thus, the vertically synthesis of CNTs in plug structure is due to adjust metal nanoparticles by pretreated. For the metallization of CNTs, the ordered array of CNTs was covered by thin copper metal. The copper/CNTs matrixes structure have completed to embed each other. The thickness copper film coating on CNTs clean investigated by SEM, this can be seen on top of tubular form. In the other word, copper coat on the CNTs not only became the composites site but also shown well distribution of surface. For the electronic conduction property, the horizontally-oriented CNT across the trenches of the catalytic metals on pre-defined titanium nitride (Ti) electrodes by means of the thermal chemical vapor deposition is investigated. The Ti, as the upper layer on Ni pads, not only plays a role as a barrier to prevent lateral growth but also serves as a buffer site that helps in forming smaller nano-sized Ni particles. The properties of the lateral CNT, following annealing treatment, are reported. The information about interface structure of CNT treated by annealing treatment is detected using standard dc techniques with a semiconductor parameter analyzer (HP-4156B). It is suggesting that the varied metal can provide different contact behaviors in horizontally-oriented CNT device.