A Newly 3-D Embedded MEMS Structure And Its Application
碩士 === 國立交通大學 === 電信工程系所 === 95 === A novel embedded three dimensional (3-D) RF-MEMS devices and the related fabrication technology were shown in this thesis. The silicon deep etching and metallization technology were utilized to form a newly micromachined coplanar-waveguide (CPW) structure. In thes...
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ndltd-TW-095NCTU54351382019-05-15T20:07:00Z http://ndltd.ncl.edu.tw/handle/hze53b A Newly 3-D Embedded MEMS Structure And Its Application 新型三維微機電埋藏式結構與其應用 Chih-peng Lin 林智鵬 碩士 國立交通大學 電信工程系所 95 A novel embedded three dimensional (3-D) RF-MEMS devices and the related fabrication technology were shown in this thesis. The silicon deep etching and metallization technology were utilized to form a newly micromachined coplanar-waveguide (CPW) structure. In these 3-D embedded CPW, the edges of the center conductors are bended down by micromachining techniques and partially overlapped with the ground plane to fabricate the low-impedance lines. Compared with the traditional coplanar-waveguide (CPW) lines, the 3-D embedded CPW lines show wider impedance range (21–70 Ω) and lower loss. Besides, the fabrication processes of the 3-D embedded CPW lines are not complex and compatible with MMIC/VLSI circuit layouts and processing. The advantages of 3-D embedded CPW for low-Zo lines are utilized to realize a high-performance stepped-impedance low-pass filter at X-band. The 3-D embedded CPW filter shows distinct advantages over the conventional CPW filter in terms of size, loss, skirt, and stop-band characteristics. Christina F. Jou 周復芳 2007 學位論文 ; thesis 54 en_US |
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碩士 === 國立交通大學 === 電信工程系所 === 95 === A novel embedded three dimensional (3-D) RF-MEMS devices and the related fabrication technology were shown in this thesis. The silicon deep etching and metallization technology were utilized to form a newly micromachined coplanar-waveguide (CPW) structure.
In these 3-D embedded CPW, the edges of the center conductors are bended down by micromachining techniques and partially overlapped with the ground plane to fabricate the low-impedance lines. Compared with the traditional coplanar-waveguide (CPW) lines, the 3-D embedded CPW lines show wider impedance range (21–70 Ω) and lower loss. Besides, the fabrication processes of the 3-D embedded CPW lines are not complex and compatible with MMIC/VLSI circuit layouts and processing. The advantages of 3-D embedded CPW for low-Zo lines are utilized to realize a high-performance stepped-impedance low-pass filter at X-band. The 3-D embedded CPW filter shows distinct advantages over the conventional CPW filter in terms of size, loss, skirt, and stop-band characteristics.
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author2 |
Christina F. Jou |
author_facet |
Christina F. Jou Chih-peng Lin 林智鵬 |
author |
Chih-peng Lin 林智鵬 |
spellingShingle |
Chih-peng Lin 林智鵬 A Newly 3-D Embedded MEMS Structure And Its Application |
author_sort |
Chih-peng Lin |
title |
A Newly 3-D Embedded MEMS Structure And Its Application |
title_short |
A Newly 3-D Embedded MEMS Structure And Its Application |
title_full |
A Newly 3-D Embedded MEMS Structure And Its Application |
title_fullStr |
A Newly 3-D Embedded MEMS Structure And Its Application |
title_full_unstemmed |
A Newly 3-D Embedded MEMS Structure And Its Application |
title_sort |
newly 3-d embedded mems structure and its application |
publishDate |
2007 |
url |
http://ndltd.ncl.edu.tw/handle/hze53b |
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