| Summary: | 碩士 === 國立交通大學 === 電信工程系所 === 95 === A novel embedded three dimensional (3-D) RF-MEMS devices and the related fabrication technology were shown in this thesis. The silicon deep etching and metallization technology were utilized to form a newly micromachined coplanar-waveguide (CPW) structure.
In these 3-D embedded CPW, the edges of the center conductors are bended down by micromachining techniques and partially overlapped with the ground plane to fabricate the low-impedance lines. Compared with the traditional coplanar-waveguide (CPW) lines, the 3-D embedded CPW lines show wider impedance range (21–70 Ω) and lower loss. Besides, the fabrication processes of the 3-D embedded CPW lines are not complex and compatible with MMIC/VLSI circuit layouts and processing. The advantages of 3-D embedded CPW for low-Zo lines are utilized to realize a high-performance stepped-impedance low-pass filter at X-band. The 3-D embedded CPW filter shows distinct advantages over the conventional CPW filter in terms of size, loss, skirt, and stop-band characteristics.
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