A Comparative Study of Symmetric and Asymmetric PD SOI MOSFETs
碩士 === 國立交通大學 === 電子工程系所 === 95 === This study presents a systematic comparison between symmetric (conventional halo implant at both source and drain side) and asymmetric (halo implant at source side only) channel engineering of partially depleted (PD) SOI MOSFETs. Our investigation includes the lea...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/skye3q |