A Comparative Study of Symmetric and Asymmetric PD SOI MOSFETs

• Main Authors: Ping-Cheng Chang, 張秉真
• Other Authors: Pin Su
• Format: Others
• Language: en_US
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/skye3q

碩士 === 國立交通大學 === 電子工程系所 === 95 === This study presents a systematic comparison between symmetric (conventional halo implant at both source and drain side) and asymmetric (halo implant at source side only) channel engineering of partially depleted (PD) SOI MOSFETs. Our investigation includes the leakage components, floating-body effect, electrostatics and important analog metrics. Our study indicates that the asymmetric devices can be used to improve the output resistance (Rout) degradation observed in long-channel symmetric PD SOI MOSFETs. Moreover, the enhancement in the Rout of the floating-body device is more significant than that of the body-tied device. However, our delay-chain measurement shows that the history effect of the switching delay of the asymmetric PD SOI device is worse than that of the symmetric device.