The Study and Simulation of the Line Pattern having large Depth of Focus by using only Single Exposure and Binary Mask

碩士 === 國立交通大學 === 電子工程系所 === 95 ===

Bibliographic Details
Main Authors:	Jen-Chieh Tsao, 曹人傑
Other Authors:	Jen-Chung Lou
Format:	Others
Language:	en_US
Published:	2007
Online Access:	http://ndltd.ncl.edu.tw/handle/33069964957572258310

id	ndltd-TW-095NCTU5428154
record_format	oai_dc
spelling	ndltd-TW-095NCTU54281542016-05-04T04:16:29Z http://ndltd.ncl.edu.tw/handle/33069964957572258310 The Study and Simulation of the Line Pattern having large Depth of Focus by using only Single Exposure and Binary Mask 使用ㄧ次曝光和二元光罩來產生擁有良好聚焦深度的細線之模擬與研究 Jen-Chieh Tsao 曹人傑碩士國立交通大學電子工程系所 95 Jen-Chung Lou Bi-shiou Chiou 羅正忠邱碧秀 2007 學位論文 ; thesis 57 en_US
collection	NDLTD
language	en_US
format	Others
sources	NDLTD
description	碩士 === 國立交通大學 === 電子工程系所 === 95 ===
author2	Jen-Chung Lou
author_facet	Jen-Chung Lou Jen-Chieh Tsao 曹人傑
author	Jen-Chieh Tsao 曹人傑
spellingShingle	Jen-Chieh Tsao 曹人傑 The Study and Simulation of the Line Pattern having large Depth of Focus by using only Single Exposure and Binary Mask
author_sort	Jen-Chieh Tsao
title	The Study and Simulation of the Line Pattern having large Depth of Focus by using only Single Exposure and Binary Mask
title_short	The Study and Simulation of the Line Pattern having large Depth of Focus by using only Single Exposure and Binary Mask
title_full	The Study and Simulation of the Line Pattern having large Depth of Focus by using only Single Exposure and Binary Mask
title_fullStr	The Study and Simulation of the Line Pattern having large Depth of Focus by using only Single Exposure and Binary Mask
title_full_unstemmed	The Study and Simulation of the Line Pattern having large Depth of Focus by using only Single Exposure and Binary Mask
title_sort	study and simulation of the line pattern having large depth of focus by using only single exposure and binary mask
publishDate	2007
url	http://ndltd.ncl.edu.tw/handle/33069964957572258310
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The Study and Simulation of the Line Pattern having large Depth of Focus by using only Single Exposure and Binary Mask

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