Nonpolar Resistive Switching Properties of Sputter-Deposited SrZrO3 Memory Devices
碩士 === 國立交通大學 === 電子工程系所 === 95 === Recently, many kinds of next-generation nonvolatile memories, such as resistive random access memory (RRAM) and phase change memory, have attracted a lot of attention. Because of the RRAM possesses the bistable conductivity switching characteristics, the device ca...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85727572549658596930 |