| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 95 === Recently, many kinds of next-generation nonvolatile memories, such as resistive random access memory (RRAM) and phase change memory, have attracted a lot of attention. Because of the RRAM possesses the bistable conductivity switching characteristics, the device can exhibit two different conductivities at the same applied voltage. In addition, the RRAM with high operation speed, nondestructive readout, and simple device structure are helpful for high density of integration and lower power consumption. Therefore, the RRAM has been proposed to be a possible candidate of next-generation nonvolatile memories.
In this thesis, the RRAM devices manufactured based on SrZrO3 (SZO) thin films are studied and developed. At first, I will introduce the applications, fundamental characteristics, and advantages of next-generation nonvolatile memories. The conduction mechanisms of RRAM that have been published are also discussed. In experimental details, V2O5 doped SZO film was deposited on the LaNiO3 buffer layer by RF magnetron sputter. Pt and Al act as bottom electrode and top electrode, respectively. Therefore, electrode/resistive thin film/buffer layer/electrode structure is formed. The physical and electrical properties of the device are reported in chapter 4. Besides, the memory effects of the device are also presented, which nearly matches the criteria of RRAM. The resistive switching polarity is also compared the difference with various device structures. Furthermore, the possible resistive switching mechanism based on the research results is also discussed in this thesis.
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