| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 95 === In this thesis, next-generation nonvolatile memory will be introduced and from those we focus on resistance random access memory (RRAM) research. The RRAM has bistable resistive switching characteristic which can exhibit two states of different resistance for logic level. Therefore, RRAM can be next-generation memory by this characteristic. Owing to RRAM has excellent characteristics of high-speed operation, low-power, and high-density integration. In addition, its simple cell structure (metal-oxide-metal tri-layer), CMOS-friendly materials and low process temperature all are advantages for next-generation memory application.
RRAM is fabricated with aluminum oxide thin film deposited on Pt bottom electrode by RF magnetron sputter and chose Ti for top electrode. First, some material analyses of aluminum oxide thin films are proposed. The physical, electrical properties and reliability issue of RRAM are observed. From those analyses, conduction mechanism and switching mechanism could be driven. Finally, a solvent is proposed to improve the disadvantage of electrical characteristics for our device. It made the device potential for next-generation memory application
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