Ultrafast Carrier Dynamics of InGaAsxN1-x Single Quantum Wells by Time-Resolved Photoreflectance Measurement
碩士 === 國立交通大學 === 光電工程系所 === 95 === The comparative analysis of the ultrafast carrier dynamics of metal-organic chemical vapor deposition (MOCVD) grown In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQW) is reported. The incorporation of a low content N in InGaAsN reduces the band-gap...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25037698367508354433 |