Studies of ZnO Transparent Thin Film Transistors

• Main Authors: Barry B. L. Yeh, 葉柏良
• Other Authors: Henry J. H. Chen
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/49118233620143268790

碩士 === 國立暨南國際大學 === 電機工程學系 === 95 === In this thesis, the transparent thin-film-transistor with ZnO thin films was fabricated. To deposit ZnO film, RF-magnetron sputtering was used with the different Ar:O2 gas flow, power, and working pressure. Then, the sample was annealing with different temperature. The material and electrical characterizations were performed by four-point-probe measurement, Hall-effect measurement, XRD analysis, spectrophotometer, and HP4156 semiconductor parameter analysis. The ZnO thin film depositied with the O2(0.5%) flow ratio exhibits the optimum (0002) orientation. The resistivity of ZnO thin film is around ~10-3 Ω-cm and the Hall measurements indicates that the carrier concentration of ZnO film was between 1020~1021cm-3, and the corresponding electron mobility was about 1.0~1.5 cm2/Vs, respectively. The device shows an average transmission (λ=400~700nm) of 81.3%, the saturation mobility μsat=1.0~1.5cm2/Vs, on-off ratio ~106, and the leakage current around 10-10A. The transparent thin film transistors can be suitable for the future flat panel display applications.