Investigation of ZnO-Silicon Thin Films Deposited by Co-Sputter System

• Main Authors: Chih-Hong Liu, 劉志宏
• Other Authors: Ching-Ting Lee
• Format: Others
• Language: en_US
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/34581657248636764874

碩士 === 國立成功大學 === 光電科學與工程研究所 === 95 === In recent years, scientist gradually begins to research the principle of visible light emission of silicon quantum dot, due to its manufacture technology is maturity and the cost is cheap. Although the silicon quantum dot has the highest efficiency among the Si-base luminescence materials, it is difficult to apply on the integrated circuit or electric devices in semiconductor techniques. However, the silicon light source is still playing a very important role for future science or technology. Therefore, there are many technologies to deposit silicon quantum dot on different matrixes at present. Among them, there are two kinds of most common matrix, including the silicon oxide (SiO2) and the silicon nitride (SiNX). These two kinds of matrixes have the same drawback in electric conductivity which is difficult to apply to the electric devices. In our study, we proposed a new technique to deposit thin films on Si substrate. We use the zinc oxide to replace the silicon oxide (SiO2) and silicon nitride (SiNX) as matrix. By using co-sputter system the Si atom and zinc oxide atom can be sputtered to Si substrate simultaneously at room temperature, and then the as-deposited thin films were treated with various post-annealing condition. In order to realize the silicon contents in the zinc oxide thin film, we deposit the Si target and Zinc oxide target at individually and using the formula to calculate the theory value of the contents of silicon in the Zinc oxide thin film. At the same time, we also identified the real content of silicon in the Zinc oxide thin film by Energy dispersive x-ray spectrum (EDX). In addition, the crystalline structure and chemical bonds of these films were analyzed by using Raman spectroscopy, X-ray Diffraction spectrum (XRD) and Fourier transformation infrared spectrometry (FTIR). Furthermore, the electric properties of the as-deposited ZnO-Si thin films can be measured by the Hall measurement then the Resistivity, Mobility and Carrier concentration also can be definition. In order to investigate the luminescence mechanism in silicon quantum dot under room temperature and different temperature, the ZnO-Si thin films were measured by the Photoluminescence spectrometry (PL) and the Temperature Depended Photoluminescence spectrometry. Finally, the Transmission Electron Microscopy (TEM) to measure the quantum dot size and determine the crystalline of silicon dot.