| Summary: | 碩士 === 國立成功大學 === 光電科學與工程研究所 === 95 === In this dissertation, ISE-TCAD software is utilized as the simulation tool to study the carrier dynamics of Bias Induced Color-tunable Emitters ( BICE ). The structure of a BICE device is consisted of a p-n-i-p-n structure with one single quantum-well (SQW) and one set of multiple quantum-wells (MQW) inside the intrinsic active region. The carrier collection abilities for the MQW and SQW varied dramatically upon applying voltages across the designated electrodes, which leads to a higher carrier recombination rate through either MQW or SQW.
A p-i-n (PIN) structure with either one set of SQW or MQW inside the intrinsic region is analyzed. PIN with MQW exhibits a higher carrier collection ability compared to PIN with SQW under forward bias conditions. Another PIN structure with both SQW and MQW inside the active region is also analyzed. Both QWs exhibit lower carrier collection abilities when the slope of the band-edges become steeper under reverse bias. Results from simulation also reveal that the carrier collection abilities for a SQW are greatly affected by the well width. Reducing the well width decreases the collected carriers inside the SQW. Finally, the slope of the band-edges becomes flatter upon the illumination of light, which leads to higher carrier concentrations inside the quantum wells.
Two-terminal and three-terminal BICE are subsequently analyzed. The two-terminal BICE device exhibits poor carrier collection ability without light illumination no matter the biasing conditions. Simulation results reveal that the band-edge becomes flattened with light illumination, which leads to a dramatic improvement of carrier collection abilities for both the SQW and MQW. The biasing voltage across the device with illuminations can alter the carrier collection abilities for the SQW or the MQW. For the three-terminal BICE device, simulation results confirm that the existence of two different operation modes, Forward Active and Reverse Active Modes. SQW exhibits a higher carrier collection ability when the device is working in the Forward Active Mode. MQW exhibits a higher carrier collection ability when the device is working in the Reverse Active Mode.
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