Fabrication and Analysis of Mn-doped（BaxSr1-x）TiO3 Thin Film Used as the Insulating Layer for MIS Structure Capacitors
碩士 === 國立成功大學 === 電機工程學系碩博士班 === 95 === During developing semiconductor process, the IC must scaling size for enchance IC velocity and affect .The SiO2 insulator layer will scale to narosize . Because the leakeage current becomes large , IC mobilty decreases and current drive is not enough to push n...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76679742339064362011 |