Fabrication and Analysis of Mn-doped（BaxSr1-x）TiO3 Thin Film Used as the Insulating Layer for MIS Structure Capacitors

• Main Authors: Guo-Hui Li, 李國輝
• Other Authors: Bing-Jing Li
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/76679742339064362011

碩士 === 國立成功大學 === 電機工程學系碩博士班 === 95 === During developing semiconductor process, the IC must scaling size for enchance IC velocity and affect .The SiO2 insulator layer will scale to narosize . Because the leakeage current becomes large , IC mobilty decreases and current drive is not enough to push next cuircuit. The insulator layer uses high k to reduce scaling size current problem.The deposited method in thesis was adopted the R.F. supptering .The thesis discusses five diffrence type of BST thin films deposition. It are variable deposited temperture、variable deposited power、variable OMR、variable dopped manganese on BST thin film、and anneling temperture of the BST thin film. In the only BST thin film discussion, the bast electric charateristic is OMR（Ar：O2=6：6）that I measure ； on the contrary , although in the fewer O2 concentration was deposted vary fast , the BST thin film which dielectric content and leakage currence was poor . Dopping Mn in the thin film was found when it increases Mn to decrease rms and enhace deposition quality . So we discussed dopping Mn on thin film and oxygen vacancies , relation. Afrer dopping 1wt% Mn ,and leakage current was 8.85E-8 A/cm2,and used annealing to get the best leakage current 6.23E-8 A/cm2.